052-6342 rev a 4 - 2008 absolute maximum ratings symbol parameter ratings unit v ces collector emitter voltage 600 v i c1 continuous collector current @ t c = 25c 143 a i c2 continuous collector current @ t c = 100c 80 i cm pulsed collector current 1 240 v ge gate-emitter voltage 2 30 v p d total power dissipation @ t c = 25c 625 w ssoa switching safe operating area @ t j = 150c 240a @ 600v t j , t stg operating and storage junction temperature range -55 to 150 c t l lead temperature for soldering: 0.063" from case for 10 seconds 300 combi (igbt and diode) typical applications ? zvs phase shifted and other full bridge ? half bridge ? high power pfc boost ? welding ? ups, solar, and other inverters ? high frequency, high ef ciency industrial features ? fast switching with low emi ? very low e off for maximum ef ciency ? ultra low c res for improved noise immunity ? low conduction loss ? low gate charge ? increased intrinsic gate resistance for low emi ? rohs compliant APT80GA60B2D40 apt80ga60ld40 600v power mos 8 ? is a high speed punch-through switch-mode igbt. low e off is achieved through leading technology silicon design and lifetime control processes. a reduced e off - v ce(on) tradeoff results in superior ef ciency compared to other igbt technologies. low gate charge and a greatly reduced ratio of c res /c ies provide excellent noise immunity, short delay times and simple gate drive. the intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low emi, even when switching at high frequency. microsemi website - http://www.microsemi.com high speed pt igbt static characteristics t j = 25c unless otherwise speci ed symbol parameter test conditions min typ max unit v br(ces) collector-emitter breakdown voltage v ge = 0v, i c = 1.0ma 600 v v ce(on) collector-emitter on voltage v ge = 1 5 v, i c = 47a t j = 25c 2.0 2.5 t j = 125c 1.9 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 600v, v ge = 0v t j = 25c 275 a t j = 125c 3000 i ges gate-emitter leakage current v gs = 30v 100 na apt80ga60ld40 APT80GA60B2D40
052-6342 rev a 4 - 2008 thermal and mechanical characteristics dynamic characteristics t j = 25c unless otherwise speci ed APT80GA60B2D40_ld40 symbol characteristic min typ max unit r jc junction to case thermal resistance (igbt) - - 0.2 c/w r jc junction to case thermal resistance (diode) .67 w t package weight - 6.1 - g torque mounting torque (to-264 package), 4-40 or m3 screw 10 inlbf symbol parameter test conditions min typ max unit c ies input capacitance capacitance v ge = 0v, v ce = 25v f = 1mhz 6390 pf c oes output capacitance 580 c res reverse transfer capacitance 63 q g 3 total gate charge gate charge v ge = 15v v ce = 300v i c = 47a 230 q ge gate-emitter charge 40 nc q gc gate- collector charge 78 ssoa switching safe operating area t j = 150c, r g = 4.7 4 , v ge = 15v, l= 100uh, v ce = 600v 240 a t d(on) turn-on delay time inductive switching (25c) v cc = 400v v ge = 15v i c = 47a r g = 4.7 4 t j = +25c 23 ns t r current rise time 27 t d(off) turn-off delay time 158 t f current fall time 78 e on2 turn-on switching energy 840 j e off 6 turn-off switching energy 751 t d(on) turn-on delay time inductive switching (125c) v cc = 400v v ge = 15v i c = 47a r g = 4.7 4 t j = +125c 21 ns t r current rise time 31 t d(off) turn-off delay time 194 t f current fall time 132 e on2 turn-on switching energy 1275 j e off 6 turn-off switching energy 1112 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 pulse test: pulse width < 380 s , duty cycle < 2%. 3 see mil-std-750 method 3471. 4 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) 5 e on2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the igbt turn on energy loss. a combi device is used for the clamping diode. 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. microsemi reserves the right to change, without notice, the speci cations and information contained herein.
052-6342 rev a 4 - 2008 static electrical characteristics dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci? ed. ultrafast soft recovery rectifier diode symbol characteristic / test conditions APT80GA60B2D40_ld40 unit i f(av) maximum average forward current (t c = 111c, duty cycle = 0.5) 40 amps i f(rms) rms forward current (square wave, 50% duty) 63 i fsm non-repetitive forward surge current (t j = 45c, 8.3 ms) 320 symbol characteristic / test conditions min type max unit v f forward voltage i f = 40a 2.0 volts i f = 80a 2.5 i f = 40a, t j = 125c 1.7 symbol characteristic test conditions min typ max unit t rr reverse recovery time i f = 1a, di f /dt = -100a/ s , v r = 30v, t j = 25 c - 22 - ns t rr reverse recovery time i f = 40a, di f /dt = -200a/ s v r = 400v, t c = 25 c - 25 - q rr reverse recovery charge - 35 - nc i rrm maximum reverse recovery current - 3 - amps t rr reverse recovery time i f = 40a, di f /dt = -200a/ s v r = 400v, t c = 125 c - 160 -ns q rr reverse recovery charge - 480 - nc i rrm maximum reverse recovery current - 6 - amps t rr reverse recovery time i f = 40a, di f /dt = -1000a/ s v r = 400v, t c = 125 c - 85 - ns q rr reverse recovery charge - 920 -nc i rrm maximum reverse recovery current - 20 - amps z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 0.5 single pulse 0.1 0.3 0.7 0.05 figure 1b, transient thermal impedance model peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: d = 0.9 0.289 0.381 0.00448 0.120 dissipated power (watts) t j (c) t c (c) z ext are the external thermal impedances: case to sink, sink to ambient, etc. set to zero when modeling only the case to junction. z ext
052-6342 rev a 4 - 2008 dynamic characteristics t j = 25c unless otherwise speci ed APT80GA60B2D40_ld40 t j = 125 c v r = 400v 20a 40a 80a 180 160 140 120 100 80 60 40 20 0 25 20 15 10 5 0 duty cycle = 0.5 t j = 175 c 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 80 70 60 50 40 30 20 10 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 6. dynamic parameters vs. junction temperature figure 7. maximum average forward current vs. casetempera ture v r , reverse voltage (v) figure 8. junction capacitance vs. reverse voltage v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 2. forward current vs. forward voltage figure 3. reverse recovery time vs. current rate of chan ge -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 4. reverse recovery charge vs. current rate of change figure 5. reverse recovery current vs. current rate of cha nge q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 175 c t j = -55 c t j = 25 c t j = 125 c t j = 125 c v r = 400v 80a 20a 40a 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 120 100 80 60 40 20 0 1400 1200 1000 800 600 400 200 0 t j = 125 c v r = 400v 80a 40a 20a t rr q rr q rr t rr i rrm 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 200 180 160 140 120 100 80 60 40 20 0
052-6342 rev a 4 - 2008 dynamic characteristics t j = 25c unless otherwise speci ed APT80GA60B2D40_ld40 microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. apt40gt60br 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure 9. diode test circuit figure 10, diode reverse recovery waveform and definitions 0.25 i rrm pearson 2878 current transformer di f /dt adjust 30 h d.u.t. +18v 0v v r t rr / q rr waveform 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) gate these dimensions are equal to the to-247 without the mounting hole. 2-plcs. 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) collector emitter gate dimensions in millimeters and (inches) 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) collector emitter collector collector t-max tm (b2) package outline to-264 (l) package outline (cathode) (anode) (cathode) (anode) (cathode)
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